MJD122 discrete semiconductors r dc components co., ltd. technical specifications of npn darlington transistor pinning 1 = base 2 = collector 3 = emitter description designed for use in general purpose amplifier and low speed switching applications. characteristic symbol rating unit collector-base voltage vcbo 100 v collector-emitter voltage vceo 100 v emitter-base voltage vebo 5 v collector current ic 8 a total power dissipation(t c=25oc) pd 20 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown voltage bvcbo 100 - - v ic=1ma collector-emitter breakdown voltage bvceo 100 - - v ic=30ma emitter-base breakdown voltage bvebo 5 - - v ie=1ma collector cutoff current icbo - - 10 ma vcb =100v iceo - - 10 ma vce =50v emitter cutoff current iebo - - 2 ma veb =5v collector-emitter saturation voltage (1) vce(sat)1 - - 2 v ic=4a, ib=16ma vce(sat)2 - - 4 v ic=8a, ib=80ma base-emitter saturation voltage (1) vbe(sat) - - 4.5 v ic=8a, ib=80ma base-emitter on voltage (1) vbe(on) - - 2.8 v ic=4a, vce=4v dc current gain(1) hfe1 1k - 12k - ic=4a, vce=4v hfe2 100 - - - ic=8a, vce=4v output capacitance cob - - 200 pf vcb =10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% to-252(dpak) .032 (0.80) .268(6.80).252(6.40) .217(5.50).205(5.20) .024(0.60).018(0.45) .022(0.55).018(0.45) .063(1.60).055(1.40) .228(5.80).213(5.40) .110(2.80) .087(2.20) .091 (2.30) typ .035 (0.90) max max .077(1.95).065(1.65) .059(1.50).035(0.90) 1 2 3 2 dimensions in inches and (millimeters)
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